downloaded from elcodis.com electronic components distributor TPCA8027-H 2008-06-26 1 toshiba field effect transis tor silicon n-channel mos type (ultra-high-speed u-mos ) TPCA8027-H switching regulator applications motor drive applications ? small footprint due to a small and thin package ? high-speed switching ? small gate charge: q sw = 8.1 nc (typ.) ? low drain-source on-resistance: r ds (on) = 8.0 m (typ.) ? high forward transfer admittance: |y fs | = 44 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 40 v) ? enhancement mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristic symbol rating unit drain-source voltage v dss 40 v drain-gate voltage (r gs = 20 k ) v dgr 40 v gate-source voltage v gss 20 v dc (note 1) i d 30 drain current pulsed (note 1) i dp 90 a drain power dissipation (tc=25 ) p d 45 w drain power dissipation (t = 10 s) (note 2a) p d 2.8 w drain power dissipation (t = 10 s) (note 2b) p d 1.6 w single-pulse avalanche energy (note 3) e as 84 mj avalanche current i ar 30 a repetitive avalanche energy (tc = 25 ) (note 4) e ar 4.5 mj channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: for notes 1 to 4, refer to the next page. using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temper ature, etc.) may cause this product to decrease in the reliability significantly even if the operat ing conditions (i.e. operating temperature/ current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). this transistor is an electrostatic-sensitive device. handle with care. unit: mm 0.50.1 6.00.3 1.27 0.40.1 5.00.2 0.595 0.05 m a 1 4 5 8 0.150.05 0.80.1 1.10.2 4.250.2 0.60.1 3.50.2 1 4 5 8 5.00.2 0.950.05 s 0.05 s a 0.1660.05 jedec D jeita D toshiba 2-5q1a weight: 0.080 g (typ.) circuit configuration 8 6 1 2 3 7 5 4 1,2,3:source 4:gate 5 , 6 , 7 , 8:drain
downloaded from elcodis.com electronic components distributor TPCA8027-H 2008-06-26 2 thermal characteristics characteristic symbol max unit thermal resistance, channel to case (tc=25 ) r th (ch-c) 2.78 c/w thermal resistance, channel to ambient (t = 10 s) (note 2a) r th (ch-a) 44.6 c/w thermal resistance, channel to ambient (t = 10 s) (note 2b) r th (ch-a) 78.1 c/w marking (note 5) note 1: the channel temperature should not exceed 150c during use. note 2: (a) device mounted on a glass-epoxy board (a ) (b) device mounted on a glass-epoxy board (b) note 3: v dd = 24 v, t ch = 25c (initial), l = 0.1 mh, r g = 25 , i ar = 30 a note 4: repetitive rating: pulse width limited by max. channel temperature note 5: type tpca 8027-h (a) fr-4 25.4 25.4 0.8 (unit: mm) (b) fr-4 25.4 25.4 0.8 (unit: mm) * weekly code: (three digits) week of manufacture (01 for first week of year, continuing up to 52 or 53) year of manufacture (the last digit of the calendar year) lot no.
downloaded from elcodis.com electronic components distributor TPCA8027-H 2008-06-26 3 electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit gate leakage current i gss v gs = 16 v, v ds = 0 v ? ? 10 a drain cutoff current i dss v ds = 40 v, v gs = 0 v ? ? 10 a v (br) dss i d = 10 ma, v gs = 0 v 40 ? ? drain-source breakdown voltage v (br) dsx i d = 10 ma, v gs = ?20 v 25 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1 ma 2.0 ? 4.0 v drain-source on-resistance r ds (on) v gs = 10 v, i d = 15 a ? 8.0 10 m forward transfer admittance |y fs | v ds = 10 v, i d = 15 a 22 44 ? s input capacitance c iss ? 1430 ? reverse transfer capacitance c rss ? 95 ? output capacitance c oss v ds = 10 v, v gs = 0 v, f = 1 mhz ? 450 ? pf rise time t r ? 4 ? turn-on time t on ? 13 ? fall time t f ? 3 ? switching time turn-off time t off duty 1%, t w = 10 s ? 19 ? ns total gate charge (gate-source plus gate-drain) q g ? 23 ? gate-source charge 1 q gs1 ? 7.3 ? gate-drain (?miller?) charge q gd ? 5.2 ? gate switch charge q sw v dd 32 v, v gs = 10 v, i d = 30 a ? 8.1 ? nc source-drain ratings and characteristics (ta = 25c) characteristic symbol test condition min typ. max unit drain reverse current pulse (note 1) i drp ? ? ? 90 a forward voltage (diode) v dsf i dr = 30 a, v gs = 0 v ? ? ? 1.2 v r l = 1.33 v dd 20 v 0 v v gs 10 v 4.7 i d = 15a v out
downloaded from elcodis.com electronic components distributor TPCA8027-H 2008-06-26 4 10 100 1 0.1 1 10 100 1 10 100 1 100 25 100 tc = ? 55 c 10 0 1.0 0.2 0.6 0.4 0.8 4 0 20 8 12 16 i d = 30 a 15 7.5 0 100 20 40 60 2 0 8 46 100 25 tc = ? 55 c 80 80 60 40 20 0 100 0 2 5 4 3 1 5.5 10 6 8 5.8 5.3 5 4.8 v gs = 4.2 v 4.6 4.4 50 30 20 0 40 10 0 0.2 0.4 0.6 0.8 1.0 10 8 6 4.6 v gs = 4.2 v 5 5.3 4.8 4.4 5.5 i d ? v ds i d ? v ds drain-source voltage v ds (v) drain current i d (a) drain current i d (a) r ds (on) ? i d drain-source on-resistance r ds (on) (m ) drain current i d (a) ? y fs ? ? i d forward transfer admittance |y fs | (s) drain-source voltage v ds (v) drain current i d (a) gate-source voltage v gs (v) i d ? v gs drain current i d (a) drain-source voltage v ds (v) gate-source voltage v gs (v) v ds ? v gs common source tc = 25c pulse test common source v ds = 10 v pulse test common source tc = 25c pulse test common source ta = 25c pulse test v gs = 10 v common source tc = 25c pulse test common source v ds = 10 v pulse test
downloaded from elcodis.com electronic components distributor TPCA8027-H 2008-06-26 5 v ds v ds = 32 v v gs 8 16 12 10 6 4 0 0 0 12 32 10 20 40 60 80 24 16 30 50 70 20 28 4 16 8 14 8 2 0 2 5 3 ? 80 ? 40 0 40 80 120 160 1 4 10 1000 10000 0.1 1 10 100 100 c iss c oss c rss 0.1 100 1 0 ? 0.2 ? 0.6 ? 0.8 ? 1.2 ? 0.4 10 5 3 1 v gs = 0 v 10 ? 1.0 0 20 4 12 8 16 ? 40 ? 80 160 0 80 120 i d = 7.5 a 15 30 40 drain-source voltage v ds (v) capacitance ? v ds capacitance c (pf) drain-source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) gate threshold voltage v th (v) ambient temperature ta ( c) v th ? ta case temperature t c ( c) r ds (on) ? tc drain-source on-resistance r ds (on) (m ) total gate charge q g (nc) drain-source voltage v ds (v) dynamic input/output characteristics gate-source voltage v gs (v) common source tc = 25c pulse test common source v gs = 0 v f = 1 mhz tc = 25c common source v ds = 10 v i d = 1 ma pulse test common source pulse test common source i d = 30 a tc = 25c pulse test
downloaded from elcodis.com electronic components distributor TPCA8027-H 2008-06-26 6 0.1 1 10 100 0.1 10 1 1000 t = 1 ms * 10 ms * v dss max 100 50 40 30 20 10 0 0 40 80 120 160 1000 0.1 0.001 1000 0.01 1 10 100 1 100 10 0.1 (1) ( 2 ) (3) 3.0 2.0 0 1.5 2.5 1.0 0.5 0 40 80 120 160 (1) (2) transient thermal impedance r th (c/w) pulse width t w (s) r th ? t w (1) device mounted on a glass-epoxy board (a) (note 2a) (2) device mounted on a glass-epoxy board (b) (note 2b) (3) tc=25 single - pulse drain current i d (a) drain-source voltage v ds (v) safe operating area i d max (pulse) * * single - pulse tc = 25 curves must be derated linearly with increase in temperature. case temperature t c ( c) p d ? tc drain power dissipation p d (w) ambient temperature ta ( c) p d ? ta drain power dissipation p d (w) (1) device mounted on a glass-epoxy board (a) (note 2a) (2) device mounted on a glass-epoxy board (b) (note 2b) t=10s i d max (continuous) tc=25
downloaded from elcodis.com electronic components distributor TPCA8027-H 2008-06-26 7 restrictions on product use 20070701-en general ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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